Memory device and method of use

Details Memory device and method of use Memory device and method of use

2006-01-03

2006-01-03

Tran, M (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06982901

ABSTRACT:
A memory device includes a material layer associated with at least one memory cell. The material layer is alterable to change the electrical resistance of the memory cell.

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