Memory device and method of repairing the same

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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C365S185090, C365S201000

Reexamination Certificate

active

07570526

ABSTRACT:
A memory device includes a main memory cell having a plurality of first memory cells for storing data, wherein a special block for storing a column address corresponding to a first memory cell having at least one failure is disposed in a part of area of the main memory cell; a start address block configured to store address information initiated by the special block of the main memory cell; and a repair information block configured to provisionally store the column address stored in the special block, and to output a repair controlling signal when operating the memory device.

REFERENCES:
patent: 4701887 (1987-10-01), Ogawa
patent: 5113371 (1992-05-01), Hamada
patent: 6141267 (2000-10-01), Kirihata et al.
patent: 6349061 (2002-02-01), Yoneyama et al.
patent: 6404683 (2002-06-01), Yumoto
patent: 6462985 (2002-10-01), Hosono et al.
patent: 7224605 (2007-05-01), Moogat et al.
patent: 7313022 (2007-12-01), Takeuchi et al.
patent: 10-2001-0070382 (2001-07-01), None
patent: 1020040008717 (2004-01-01), None
patent: 10-2005-0058224 (2005-06-01), None

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