Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2006-12-28
2009-08-04
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S185090, C365S201000
Reexamination Certificate
active
07570526
ABSTRACT:
A memory device includes a main memory cell having a plurality of first memory cells for storing data, wherein a special block for storing a column address corresponding to a first memory cell having at least one failure is disposed in a part of area of the main memory cell; a start address block configured to store address information initiated by the special block of the main memory cell; and a repair information block configured to provisionally store the column address stored in the special block, and to output a repair controlling signal when operating the memory device.
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Hynix / Semiconductor Inc.
Nguyen Tan T.
Townsend and Townsend / and Crew LLP
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