Memory device and method of programming thereof

Details Memory device and method of programming thereof Memory device and method of programming thereof

2011-07-12

2011-07-12

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180

Reexamination Certificate

active

07978521

ABSTRACT:
The method of programming data in a memory device includes applying a plurality of pulses to a plurality of memory cells, at least one of the plurality of pulses being a positive pulse having a positive voltage and at least one of the plurality of pulses being a negative pulse having a negative voltage, and a temporal interval existing between subsequent pulses of the plurality of pulses, and controlling at least one of a width of at least one of the temporal intervals and a magnitude of at least one of the plurality of pulses.

REFERENCES:
patent: 6721204 (2004-04-01), Yeh et al.
patent: 6928001 (2005-08-01), Avni et al.
patent: 7355897 (2008-04-01), Hsu et al.
patent: 2007/0115719 (2007-05-01), Wu
patent: 2007/0236994 (2007-10-01), Hsu et al.
patent: 2008/0031053 (2008-02-01), Wu
patent: 2005-317191 (2005-11-01), None
patent: 10-2001-0105143 (2001-11-01), None

Affiliated with

Also associated with

Rating

Memory device and method of programming thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device and method of programming thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device and method of programming thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2660965