Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-08-23
2011-08-23
Nguyen, Linh V (Department: 2819)
Static information storage and retrieval
Floating gate
Multiple values
C365S185180, C365S185240, C365S189050, C341S058000, C341S059000
Reexamination Certificate
active
08004891
ABSTRACT:
Example embodiments may provide a memory device and memory data programming method. The memory device according to example embodiments may encode a first data page to generate at least one first codeword and encode a second data page to generate a second codeword. The memory device may generate the first codeword with at least one of a maximum value of a number of successive ones and a second maximum value of a number of successive zeros. The memory device may program the at least one first codeword and the at least one second codeword to a plurality of multi-bit cells.
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Cho Kyoung Lae
Kim Jae Hong
Kim Yong June
Kong Jun Jin
Son Hong Rak
Harness & Dickey & Pierce P.L.C.
Nguyen Linh V
Samsung Electronics Co,. Ltd.
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