Memory device and method of fabricating the same

Details Memory device and method of fabricating the same Memory device and method of fabricating the same

2011-04-12

2011-04-12

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S320000, C257SE21680

Reexamination Certificate

active

07923770

ABSTRACT:
A method of fabricating memory devices is provided. First, a charge storage structure including a gate dielectric structure is formed on the substrate in sequence to form a charge trapping layer. Then, a gate conductive layer is formed above the charge storage structure. Afterwards, the gate conductive layer and at least a part of the charge storage structure are patterned. The cross section of the patterned charge storage structure is then become a trapezoid or a trapezoid analogue, which has the shorter side near the gate conductive layer and the longer side near the substrate.

REFERENCES:
patent: 2005/0145896 (2005-07-01), Song et al.

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