Static information storage and retrieval – Read/write circuit – Simultaneous operations
Reexamination Certificate
2007-10-16
2007-10-16
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Simultaneous operations
C365S230060
Reexamination Certificate
active
10987091
ABSTRACT:
A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers, each layer of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking steps needed for contacts. Maximum use of self alignment techniques minimizes photolithographic limitations. In one embodiment the peripheral circuits are formed in a silicon substrate and an N level array is fabricated above the substrate.
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Camperi-Ginestet, C.,
Le Thong Q.
SanDisk 3D LLC
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