Static information storage and retrieval – Read/write circuit
Reexamination Certificate
2008-05-27
2008-05-27
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
C365S154000, C365S063000, C365S230080
Reexamination Certificate
active
07379347
ABSTRACT:
A memory device and method of performing a write operation in such a memory device are provided. The memory device comprises a memory array having a plurality of memory cells, and a plurality of word lines and a plurality of bit lines via which the plurality of memory cells are accessed. Write driver circuitry is responsive to a write request to write data into at least one memory cell during a programming interval by altering voltage on at least one of the bit lines connected to that at least one memory cell while one of the word lines connected to the at least one memory cell is selected, to cause a value indicative of the data to be stored in the at least one memory cell. At a start of the programming interval the at least one bit line is at a first voltage, and the write driver circuitry comprises first coupling circuitry responsive to the write request to couple the at least one bit line to a second voltage to cause the voltage on that at least one bit line to transition towards the second voltage. The first and second voltages represent the operating voltages of the memory cells. Further, additional coupling circuitry is provided which is triggered at a predetermined time during the programming interval to cause the at least one bit line to transition beyond the second voltage towards a third voltage. It has been found that such an approach significantly improves the writeability of memory cells within a memory device arranged to operate at low supply voltages.
REFERENCES:
patent: 6741493 (2004-05-01), Christensen et al.
patent: 7035132 (2006-04-01), Nautiyal et al.
Yamaoka et al., “90-nm Process-Variation Adaptive Embedded SRAM Modules With Power-Line-Floating Write Technique”, IEEE Journal of Solid-State Circuits, vol. 41, No. 3, Mar. 2006, pp. 705-711.
ARM Limited
Dinh Son
Le Toan
Nixon & Vanderhyc P.C.
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