Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-02-09
2009-06-02
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185010, C365S185290
Reexamination Certificate
active
07542346
ABSTRACT:
A memory device and method for operating the same are provided. The example method may be directed to a method of performing a memory operation on a memory device, and may include applying a negative voltage bias to the memory device during a programming operation of the memory device and applying a positive voltage bias to the memory device during an erasing operation of the memory device. The example memory device may include a substrate and a gate structure formed on the substrate, the gate structure exhibiting a faster flat band voltage shift under a negative voltage bias than under a positive voltage bias, the gate structure receiving a negative voltage bias during a programming of the memory device and receiving a positive voltage bias during an erasing operation of the memory device.
REFERENCES:
patent: 7272043 (2007-09-01), Liao et al.
Cha Young-Kwan
Park Sang-Jin
Park Young-Soo
Shin Sang-Min
Harness Dickey & Pierce
Hoang Huan
Samsung Electronics Co,. Ltd.
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