Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-27
2009-10-06
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257SE29300, C438S259000, C438S266000, C365S185010
Reexamination Certificate
active
07598563
ABSTRACT:
A split gate (flash) EEPROM cell and a method for manufacturing the same is disclosed, in which a control gate and a floating gate are formed in a vertical structure, to minimize a size of the cell, to obtain a high coupling ratio, and to lower a programming voltage. The split gate EEPROM cell includes a semiconductor substrate having a trench; a tunneling oxide layer at sidewalls of the trench; a floating gate, a dielectric layer and a control gate in sequence on the tunneling oxide layer; a buffer dielectric layer at sidewalls of the floating gate and the control gate; a source junction in the semiconductor substrate at the bottom surface of the trench; a source electrode in the trench between opposing buffer dielectric layers, electrically connected to the source junction; and a drain junction on the surface of the semiconductor substrate outside the trench.
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English Translation of a Chinese Office Action; Application No. 200510130178.9; Dated Jan. 18, 2008; State Intellectual Property Office of People's Republic of China; People's Republic of China.
Brown Turner Sharon E.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Lin John
Parker Kenneth A
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