Memory device and method for forming a passivation layer...

Details Memory device and method for forming a passivation layer... Memory device and method for forming a passivation layer...

2005-03-15

2005-03-15

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S639000, C257S649000, C257S760000, C438S769000, C438S954000

Reexamination Certificate

active

06867466

ABSTRACT:
A memory device with an improved passivation structure. The memory device includes a semiconductor substrate with memory units thereon, an interconnect structure over the surface of the semiconductor substrate to connect with the memory units, and a passivation structure over the surface of the interconnect structure. The passivation structure comprises a dielectric layer over the surface of the interconnect structure and a silicon-oxy-nitride (SiOxNy) layer over the surface of the dielectric layer.

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