Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-06-23
2010-06-29
Dinh, Son (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185200, C365S185030
Reexamination Certificate
active
07746702
ABSTRACT:
Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.
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Cho Kyoung Lae
Kim Jae-Hong
Kong Jun Jin
Park Yoon Dong
Song Seung-Hwan
Dinh Son
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
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