Memory device and memory programming method

Details Memory device and memory programming method Memory device and memory programming method

2009-03-13

2011-11-15

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185220

Reexamination Certificate

active

08059467

ABSTRACT:
Memory devices and/or memory programming methods are provided. A memory device may include: a memory cell array including a plurality of memory cells; a programming unit configured to apply a plurality of pulses corresponding to a program voltage to a gate terminal of each of the plurality of memory cells, and to apply a program condition voltage to a bit line connected with a memory cell having a threshold voltage lower than a verification voltage from among the plurality of memory cells; and a control unit configured to increase the program voltage during a first time interval by a first increment for each pulse, and to increase the program voltage during a second time interval by a second increment for each pulse. Through this, it may be possible to reduce a width of a distribution of threshold voltages of a memory cell.

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