Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-01-04
2011-01-04
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185240
Reexamination Certificate
active
07864574
ABSTRACT:
Provided are memory devices and memory programming methods. A memory device may include a multi-bit cell array including a plurality of multi-bit cells, a programming unit configured to program a first data page in the plurality of multi-bit cells and to program a second data page in the multi-bit cells with the programmed first data page, a first controller configured to divide the multi-bit cells with the programmed first data page into a first group and a second group, and a second controller configured to set a target threshold voltage interval of each of the multi-bit cells included in the first group based on first read voltage levels and the second data page, and to set a target threshold voltage interval of each of the multi-bit cells included in the second group based on second read threshold voltage levels and the second data page.
REFERENCES:
patent: 6233717 (2001-05-01), Choi
patent: 7206224 (2007-04-01), Randolph et al.
patent: 7298648 (2007-11-01), Lee et al.
patent: 7301806 (2007-11-01), Tanaka
patent: 7349249 (2008-03-01), Honma et al.
patent: 7405970 (2008-07-01), Tanaka et al.
patent: 2003/0189856 (2003-10-01), Cho et al.
patent: 2006/0268654 (2006-11-01), Chae et al.
patent: 1 028 433 (2000-08-01), None
patent: 2003-067260 (2003-03-01), None
patent: 2006-146406 (2006-06-01), None
patent: 10-2007-0115755 (2007-12-01), None
patent: 10-2008-0012199 (2008-02-01), None
International Search Report dated Apr. 30, 2010 for corresponding PCT Application No. PCT/KR2009/002487.
Cho Kyoung Lae
Kim Yong June
Kong Jun Jin
Song Seung-Hwan
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Tran Michael T
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