Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2011-01-11
2011-01-11
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000, C365S173000
Reexamination Certificate
active
07869272
ABSTRACT:
A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.
REFERENCES:
patent: 6256223 (2001-07-01), Sun
patent: 6532164 (2003-03-01), Redon et al.
patent: 6888742 (2005-05-01), Nguyen et al.
patent: 6992359 (2006-01-01), Nguyen et al.
patent: 7170778 (2007-01-01), Kent et al.
patent: 7366010 (2008-04-01), Hosobuchi
patent: 7663848 (2010-02-01), Huai et al.
patent: 2002/0044479 (2002-04-01), Ikeda
patent: 2002/0105827 (2002-08-01), Redon et al.
patent: 2005/0018439 (2005-01-01), Schevardo et al.
patent: 2005/0184839 (2005-08-01), Nguyen et al.
patent: 2006/0108620 (2006-05-01), Rizzo et al.
patent: 2003-017782 (2003-01-01), None
patent: 2006-165265 (2006-06-01), None
Berger, L., “Emission of Spin Waves by a Magnetic Multilayer Traversed by a Current,” Physical Review B, vol. 54, No. 13, pp. 9353-9358 (1996).
Slonczewski, J.C., “Current-Driven Excitation of Magnetic Multilayers,” Journal of Magnetism and Magnetic Materials, vol. 159, pp. L1-L7 (1996).
Albert, F.J., “Spin-Polarized current switching of a CO Thin Film Nanomagnet,” Applied Physics Letters, vol. 77, No. 23, pp. 3809-3811 (2000).
Higo Yutaka
Hosomi Masanori
Kano Hiroshi
Ohmori Hiroyuki
Oishi Yuki
K&L Gates LLP
Sony Corporation
Yoha Connie C
LandOfFree
Memory device and memory for retaining information based on... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory device and memory for retaining information based on..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device and memory for retaining information based on... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2721972