Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-01-18
2011-01-18
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S200000, C365S185090, C365S185240, C365S185020
Reexamination Certificate
active
07872909
ABSTRACT:
Provided are memory devices and memory data read methods. A method device may include: a multi-bit cell array; a decision unit that may detect threshold voltages of multi-bit cells of the multi-bit cell array to decide first data from the detected threshold voltages, using a first decision value; an error detector that may detect an error bit of the first data; and a determination unit that may determine whether the decision unit decides second data from the detected threshold voltages using a second decision value, based on a number of detected error bits, the second decision value being different from the first decision value. Through this, it is possible to reduce time spent for reading data stored in the multi-bit cell.
REFERENCES:
patent: 6185134 (2001-02-01), Tanaka
patent: 6549459 (2003-04-01), Higuchi
patent: 6982904 (2006-01-01), Shiga
patent: 7099190 (2006-08-01), Noguchi et al.
patent: 6988227 (2006-11-01), Perrott
patent: 7305596 (2007-12-01), Noda et al.
patent: 7362623 (2008-04-01), Honma et al.
patent: 7464259 (2008-12-01), Sukegawa et al.
patent: 7551486 (2009-06-01), Cornwell et al.
patent: 7558109 (2009-07-01), Brandman et al.
patent: 7593263 (2009-09-01), Sokolov et al.
patent: 7639531 (2009-12-01), Cornwell et al.
patent: 7697326 (2010-04-01), Sommer et al.
patent: 2005/0050410 (2005-03-01), Pomaranski et al.
patent: 2006/0277434 (2006-12-01), Tsern et al.
patent: 2007/0109845 (2007-05-01), Chen
patent: 2007/0183196 (2007-08-01), Gendrier et al.
patent: 2007/0258297 (2007-11-01), Hung et al.
patent: 2007/0263455 (2007-11-01), Cornwell et al.
PCT International Search Report and Written Opinion dated Feb. 18, 2009.
Eun Heeseok
Kong Jun Jin
Song Seung-Hwan
Yu Dong Hun
Harness & Dickey & Pierce P.L.C.
Nguyen Viet Q
Samsung Electronics Co,. Ltd.
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