Memory device and manufacturing method thereof

Details Memory device and manufacturing method thereof Memory device and manufacturing method thereof

2006-03-14

2009-06-30

Nguyen, Kimberly D (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07554147

ABSTRACT:
A memory device in which both DRAM and phase-change memory (PCRAM) are mounted is provided with a DRAM bit line, a PCRAM bit line or a PCRAM source line formed on an conductive layer shared with the DRAM bit line, and a sense amplifier connected between the DRAM bit line and the PCRAM bit line. The memory device further has a capacitive element disposed on the upper layer of the DRAM bit line, and a phase-change element disposed on the upper layer of the PCRAM bit line. The lower electrode of the capacitive element and the lower electrode of the phase-change memory element are formed on the shared conductive layer.

REFERENCES:
patent: 2005/0185444 (2005-08-01), Yang et al.
patent: 2006/0148135 (2006-07-01), Matsuoka et al.
patent: 2003-91463 (2003-03-01), None
patent: 2003-229537 (2003-08-01), None

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