Memory device and its manufacturing method

Details Memory device and its manufacturing method Memory device and its manufacturing method

2007-03-06

2007-03-06

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000, C257S295000

Reexamination Certificate

active

10858498

ABSTRACT:
A memory device includes a semiconductor substrate, a transistor formed by using the semiconductor substrate, and a capacitor connected to the semiconductor substrate. Changes in electric conductivity of the semiconductor substrate are used as different data, and the transistor reads the data. By changing the amount of charge stored in the capacitor, a density of carriers (electrons) of the semiconductor substrate is changed.

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European Search Report issued in corresponding application.

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