Memory device and fabrication method thereof

Details Memory device and fabrication method thereof Memory device and fabrication method thereof

1996-11-15

1999-11-02

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257307, 257308, 257532, 257 67, H01L 2978

Patent

active

059775807

ABSTRACT:
A memory device of the present invention allows high integration, improved operational speed, larger capacitance, improved isolation and/or reduced leakage current. The memory device includes a plurality of transistors parallel to each other and formed above a substrate. A bit line is perpendicular to each of the plurality of transistors, and is coupled to the transistors. A predetermined portion of each transistor is a storage node for a capacitor, and a plate surrounds the predetermined portion through a dielectric film.

REFERENCES:
patent: 4864464 (1989-09-01), Gonzalez
patent: 5091762 (1992-02-01), Watanabe
patent: 5329146 (1994-07-01), Soeda

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