Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-28
2006-11-28
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S324000, C257S532000, C257S640000, C438S257000, C438S238000, C438S585000
Reexamination Certificate
active
07141848
ABSTRACT:
A semiconductor device has a split-gate type memory transistor, a capacitor element, and another capacitor element formed on the same chip, in which the capacitor values of the capacitor element and the another capacitor element are independently set to different values. A capacitor element53has a dielectric film that includes a silicon oxide film41(thermal oxide film), a silicon nitride film43band a silicon oxide film57(thermal oxide film). A capacitor element55has a dielectric film that includes a silicon oxide film25(thermal oxide film), a silicon oxide film37(CVD silicon oxide film), a silicon oxide film41(thermal oxide film), a silicon nitride film43band a silicon oxide film57(thermal oxide film).
REFERENCES:
patent: 5886377 (1999-03-01), Tsuruta et al.
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Flynn Nathan J.
Hogan & Hartson L.L.P.
Seiko Epson Corporation
Wilson Scott
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