Memory device

Details Memory device Memory device

2005-04-26

2005-04-26

Lam, David (Department: 2818)

Static information storage and retrieval

Read/write circuit

Signals

C365S233100, C365S210130

Reexamination Certificate

active

06885595

ABSTRACT:
There are provided at least one read word line15, 16and17for transmitting a read control signal to a memory cell, at least one read bit line18, 19and20for transmitting information of the memory cell to an outside according to activation of the read control signal corresponding to the read word line, at least one write word line11and12for transmitting a write control signal to the memory cell, and at least one write bit line13and14for transmitting external information to the memory cell according to activation of the write control signal corresponding to the write word line, wherein the read bit line and the write bit line are provided as alternately as possible and the read control signal and the write control signal are controlled so as not to be activated at the same time.

REFERENCES:
patent: 5384734 (1995-01-01), Tsujihashi et al.
patent: 5477502 (1995-12-01), Hayashi
patent: 6014340 (2000-01-01), Sawada

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