Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2008-01-15
2008-01-15
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S094000, C365S104000, C365S149000, C365S196000
Reexamination Certificate
active
07319627
ABSTRACT:
A sense amplifier circuit for a non-volatile semiconductor memory device is used to output data written in a selected non-volatile memory cell and is constructed as a current mirror circuit including a first mirror transistor and a second mirror transistor of a mirror circuit. A selection gate transistor and a detection transistor of the selected non-volatile memory cell are included as part of a load circuit connected to a drain electrode of the second mirror transistor. The detection transistor has a drain electrode linked to a source electrode of the selection gate transistor. An operating current of the selection gate transistor is smaller than an operating current of the detection transistor, and an electric current output from the second mirror transistor is determined by the operating current of the selection gate transistor. This arrangement enables determination of the stable operating current of the memory cell irrespective of the state of a floating gate of the detection transistor. Data corresponding to the writing condition of the memory cell is thus stably output from the sense amplifier circuit, based on the stable operating current of the memory cell.
REFERENCES:
patent: 5331590 (1994-07-01), Josephson et al.
patent: 5394037 (1995-02-01), Josephson et al.
patent: 5615146 (1997-03-01), Gotou
patent: 5661686 (1997-08-01), Gotou
Elms Richard T.
Harness & Dickey & Pierce P.L.C.
Le Toan
Seiko Epson Corporation
LandOfFree
Memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2775441