Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1986-10-14
1988-10-25
Fears, Terrell W.
Static information storage and retrieval
Read/write circuit
Differential sensing
365189, G11C 1300
Patent
active
047808535
ABSTRACT:
For improvement of access time, there is disclosed a memory device comprising a plurality of memory cells each having first and second output nodes on which voltages with a slightly difference therebetween appear based on a bit of data stored in the memory cell when the memory cell is selected, a plurality of sense amplifiers one of which is activated to amplify the difference between said voltages appearing on the first and second output nodes of a selected memory cell and the others of which remain inactive condition, each of said sense amplifiers having first and second output nodes on which voltages with large difference therebetween appear when the sense amplifier is activated, and a logic circuit having first and second groups of input nodes electrically connected to the first and second output nodes of said sense amplifiers, respectively, and operative to supply first and second output nodes thereof with voltages relating to the voltages appearing on the first and second output nodes of said activated sense amplifier based on a logical operation thereof.
REFERENCES:
patent: 3969706 (1976-07-01), Proebsting et al.
patent: 4613957 (1986-09-01), Iwahashi et al.
Fears Terrell W.
NEC Corporation
LandOfFree
Memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2273540