Memory device

Static information storage and retrieval – Read/write circuit – Including signal comparison

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Details

36518521, G11C 700

Patent

active

058944397

ABSTRACT:
In a memory device employing a memory sense amplifier of the grounded-gate type, by putting a word line in an active state from a point of time in a precharge period, a high-speed operation can be implemented with no increase in access time due to a lagging change of the electric potential at the gate of the grounded-gate transistor because of an effect of a wire resistance. In addition, by lowering the electric-potential of the gate of the grounded-gate transistor using a current-mirror circuit, low power consumption can be realized.

REFERENCES:
patent: 4092735 (1978-05-01), McElroy
patent: 4375600 (1983-03-01), Wu
patent: 5247483 (1993-09-01), Okamoto
patent: 5798960 (1998-08-01), Hughes

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