Memory device

Details Memory device Memory device

1990-01-29

1992-02-25

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Molecular or atomic

369126, G11C 700, G11B 1100

Patent

active

050918800

ABSTRACT:
A memory device comprises a base plate with a memory element supporting layer, a probe with a pointed tip portion, and a fine scan element for causing the probe to scan over the surface of the memory element supporting layer. When the probe is approached to the surface of the memory element supporting layer and a suitable bias voltage is applied across the probe and the memory element supporting layer, a tunnel current is cause to flow therebetween and a specific region of the surface of the supporting layer is excited. The excited region can adsorb one molecule of, for example, di-(2-ethylhexyl)phthalate. By causing the memory element to be adsorbed selectively on the memory element supporting layer, data is recorded in the form of a projection-and-recess pattern. The recorded data can be read out by observing the surface configuration of the supporting layer in accordance with the principle of an STM (scanning tunneling microscope).

REFERENCES:
patent: 4575822 (1986-03-01), Quate
patent: 4916688 (1990-04-01), Foster et al.
D. W. Abraham et al., "Surface Modification with the Scanning Tunneling Microscope", IBM J. Res. Develop., vol. 30, No. 5, Sep. 1986, pp. 492-499.
U. Staufer et al., "Surface Modification in the Nanometer Range by the Scanning Tunneling Microscope", J. Vac. Sci. Technol. A, 6(2), Mar./Apr. 1988, pp. 537-539.

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