Memory device

Details Memory device Memory device

1993-08-02

1995-12-19

Nguyen, Viet Q.

Static information storage and retrieval

Systems using particular element

Semiconductive

365177, 365154, 365156, 365129, G11C 1140

Patent

active

054774837

ABSTRACT:
The present invention has an object to provide a memory device without the necessity of refreshment, whose circuit is small size.
A memory device structuring a memory cell by connecting the follows: i) the first transistor of PNP type, having connection of input voltage to its base and grounding an emitter; ii) the second transistor of NPN type having connection of base to a collector of the first transistor, grounding collector and connection of power source to an emitter; and iii) the collector of the second transistor to the base of the first transistor.

REFERENCES:
patent: 4366554 (1982-12-01), Aoki et al.
patent: 4455625 (1984-06-01), Denis et al.
patent: 4922411 (1990-05-01), Hobbs
patent: 4943740 (1990-07-01), Gulczynski
Pricer, David, "Integrated Circuits" (RAM, ROM), The Electrical Engineering Handbook, Editor-In-Chief, Richard C. Dorf., CRC Press, 1993, pp. 1651-1657.
Patent Abstracts of Japan, vol. 001, No. 136, 10 Nov. 1977 & JPP-A-51 120 141 (Tokyo Shibaura Electric).

Affiliated with

Also associated with

Rating

Memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-996901