Static information storage and retrieval – Read/write circuit – Accelerating charge or discharge
Patent
1993-10-19
1995-01-10
Yoo, D. Hyun
Static information storage and retrieval
Read/write circuit
Accelerating charge or discharge
365149, 365185, 365194, 365195, G11C 1600, G11C 700
Patent
active
053813758
ABSTRACT:
A memory device capable of storing a time element. The memory device includes: i) a threshold element outputting a voltage output when a gate voltage reaches a threshold voltage; ii) two inputs capacitive coupling connected to a gate of the threshold element; iii) the first RC circuit connected to the first input of the two inputs capacitive coupling; iv) the first RC circuit charging capacitance by the constant number in the predetermined time through the predetermined reference voltage inputs; v) the charging voltage of the capacitance inputted into the two inputs capacitive coupling, and vi) an output of the threshold element connected to a memory element whose parameter is time.
REFERENCES:
patent: 5161123 (1992-11-01), Mochizuki
Dorf, "The Electrical Engineering Handbook", CRC Press, 1993, pp. 1927-1937.
Shou Guoliang
Takatori Sunao
Yamamoto Makoto
Yang Weikang
Yoo D. Hyun
Yozan Inc.
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