Memory device

Details Memory device Memory device

2006-07-10

2008-03-18

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S185110, C365S230030

Reexamination Certificate

active

07345908

ABSTRACT:
The present invention is to provide a memory device including: a plurality of memory cells that each include a memory element having a memory layer and first and second electrodes that sandwich the memory layer, the plurality of memory cells being divided into memory blocks of m columns by n rows (m and n are each an integer of not less than 1, m+n≧3), the memory elements in the same memory block having the first electrode that is formed of a single layer in common to the memory elements; and a voltage application unit that applies any voltage to the first electrode of the memory block.

REFERENCES:
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 6798685 (2004-09-01), Rinerson et al.
patent: 2004/0161888 (2004-08-01), Rinerson et al.
patent: 2002-536840 (2002-10-01), None
W. W. Zhuang et al.; Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory (RRAM); Technical Digest IEDM; p. 193; 2002.
A. Beck et al.; Reproductive witching effect in thin oxide films for memory applications; Applied Physics Letters; 2000; vol. 77; p. 139-141.

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