Memory device

Details Memory device Memory device

1991-10-29

1994-07-12

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Ferroelectric

36518901, G11C 1122, G11C 700

Patent

active

053294858

ABSTRACT:
According to this invention, there is provided a memory element and a matrix memory cell array including memory cells each having a nonlinear conductivity bipolar switching element constituted by a multi-layered structure which performs writing/reading operations of a polarization state of a ferroelectric body, i.e., a recording medium of the memory cell, as data and which is constituted by an insulating layer of a predetermined-thickness Langmuir-Blodgett film using most of a switching drive current as a direct tunnel current and conductive layers formed on both the surfaces of the insulating layer.

REFERENCES:
patent: 4860254 (1989-08-01), Pott et al.
patent: 4972370 (1990-11-01), Morimoto et al.
patent: 5046043 (1991-09-01), Miller et al.
patent: 5072262 (1991-12-01), Uekita et al.
patent: 5075738 (1991-12-01), Matsuda et al.
patent: 5077762 (1991-12-01), Morimoto et al.
patent: 5220202 (1993-06-01), Isono et al.
IEEE Transactions on Electrical Insulation, vol. 25, No. 3, Jun. 1990, pp. 541-548, M. Iwamoto.
IEEE Transaction on Electric Insulation vol. 25, No. 3, Jun. 1990, pp. 435-441.
FAM: 16.3: A 16kb Ferroelectric Memory with a Bit Parallel Architecture, IEEE ISCC 1989, pp. 242-243.

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