Memory device

Details Memory device Memory device

2007-02-27

2007-02-27

Tran, Michael (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S189011

Reexamination Certificate

active

11037554

ABSTRACT:
A memory device is provided in which recording of multi-valued data can be performed at a high speed and the recording of multi-valued data can be performed with a drive circuit having comparatively simple configuration.The memory device is formed of a memory cell including a memory element which stores information according to a state of electric resistance and a MIS transistor as a load connected in series to the memory element; and when an operation to change the memory cell from a state of high resistance value to a state of low resistance value is defined as writing and when an operation to change the memory cell from the state of low resistance value to the state of high resistance value is defined as erasing respectively, a resistance value of the memory element after writing is set to a plurality of different levels by controlling gate voltages VG1, VG2and VG3, or the like, which are applied to the MIS transistor at the time of writing, so that different information is respectively assigned to each of the plurality of levels and to the state of high resistance value after erasing to store information of three values or more respectively into a memory element of each memory cell.

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Beck, A. et al.; “Reproducible Switching Effect in Thin Oxide Films for Memory Applications”, Applied Physics Letters, AIP, American Institute of Physics, Melville NY, vol. 77, No. 1, Jul. 3, 2000; pp. 139-141, XP012025998.

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