Memory device

Details Memory device Memory device

2006-08-15

2006-08-15

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S034000, C365S207000

Reexamination Certificate

active

07092278

ABSTRACT:
Data reading can be easily and precisely performed by setting specific conditions in writing into a selected memory cell. A memory cell has a structure, in which an interelectrode material layer is sandwiched between a first electrode and a second electrode. Data is stored by a change in a resistance value between the first electrode and the second electrode. The resistance value when a memory element is in a high resistance state is expressed as R_mem_high; the resistance value when the memory element is in a low resistance state is expressed as R_mem_low1; the resistance value of a load circuit is expressed as R_load; the reading voltage is expressed as Vread by setting the voltage of a second power supply line to the reference voltage; and the threshold voltage is expressed as Vth_critical. In writing data into the memory cell, the low resistance state is created so that these parameters satisfy specific relations. The load circuit is formed by an element having the same structure as of the memory element of the memory cell.

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patent: 1 496 518 (2005-01-01), None
patent: WO 03/079463 (2003-09-01), None
patent: WO 03/088254 (2003-10-01), None

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