1981-12-28
1985-05-21
Smith, Jerry
Excavating
371 20, 365201, 324 73AT, G06F 1122
Patent
active
045190763
ABSTRACT:
A means for testing the threshold voltage changes in a programmable and erasable floating gate memory cell by accessing directly and exclusively the cells in the core, and the amplifiers that sense the operation of the cells, so as to measure the relative currents therein as an indication of threshold voltage parameters.
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Ebel Mark S.
Priel Ury
Yaron Giora
Harkcom Gary V.
National Semiconductor Corporation
Pollock Michael J.
Smith Jerry
Winters Paul J.
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