Memory core and semiconductor memory device having the same

Details Memory core and semiconductor memory device having the same Memory core and semiconductor memory device having the same

2010-12-29

2011-11-01

Nguyen, Viet (Department: 2827)

Static information storage and retrieval

Format or disposition of elements

C365S063000, C365S230060

Reexamination Certificate

active

08050071

ABSTRACT:
A memory core capable of decreasing the area of core conjunction region is disclosed. The memory core includes a first sub word-line driving circuit and a first sub word-line control signal generating circuit. The first sub word-line driving circuit is disposed in a first region, and generates a first word-line driving signal to provide the first word-line driving signal to an array unit. The first sub word-line control signal generating circuit is disposed in the first region, and generates the first sub word-line control signal based on a sub word-line driving signal. Therefore, the memory core has a small size and, consequently so can the semiconductor device.

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