Memory controller that controls termination in a memory device

Electronic digital logic circuitry – Signal sensitivity or transmission integrity – Bus or line termination

Reexamination Certificate

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C326S082000

Reexamination Certificate

active

07924048

ABSTRACT:
A memory controller that controls termination in a memory device. The memory controller includes a data interface, command/address interface and termination control output. The data interface outputs write data onto a data line coupled to a data input of the memory device, and the command/address interfaces outputs, onto a command/address path coupled to the memory device, information that indicates whether the write data is to be received within the memory device. The termination control output asserts a first termination control signal on a termination control signal line coupled to the memory device to cause the memory device to either (i) couple a first termination impedance to the data line while the write data is present at the data input of the memory device if the information indicates that the write data is to be received within the memory device, or (ii) couple a second termination impedance to the data line while the write data is present at the data input of the memory device if the information indicates that the write data is not to be received within the memory device.

REFERENCES:
patent: 5467455 (1995-11-01), Gay et al.
patent: 5553250 (1996-09-01), Miyagawa et al.
patent: 5663661 (1997-09-01), Dillon
patent: 5666078 (1997-09-01), Lamphier et al.
patent: 5982191 (1999-11-01), Starr
patent: 5995894 (1999-11-01), Wendte
patent: 6060907 (2000-05-01), Vishwanthaiah et al.
patent: 6157206 (2000-12-01), Taylor et al.
patent: 6232792 (2001-05-01), Starr
patent: 6308232 (2001-10-01), Gasbarro
patent: 6356105 (2002-03-01), Volk
patent: 6356106 (2002-03-01), Greef et al.
patent: 6424200 (2002-07-01), McNitt et al.
patent: 6560666 (2003-05-01), Harriman et al.
patent: 6762620 (2004-07-01), Jang et al.
patent: 6781405 (2004-08-01), Best
patent: 6856169 (2005-02-01), Frans
patent: 6894691 (2005-05-01), Juenger
patent: 6924660 (2005-08-01), Nguyen
patent: 6965529 (2005-11-01), Zumkehr et al.
patent: 6980020 (2005-12-01), Best
patent: 6981089 (2005-12-01), Dodd et al.
patent: 7102200 (2006-09-01), Fan et al.
patent: 7103792 (2006-09-01), Moon
patent: 7123047 (2006-10-01), Lim
patent: 7148721 (2006-12-01), Park
patent: 7414426 (2008-08-01), Cox et al.
patent: 2002/0178318 (2002-11-01), Muff
patent: 2003/0012046 (2003-01-01), Lee et al.
patent: 2003/0016550 (2003-01-01), Yoo et al.
patent: 2003/0039151 (2003-02-01), Matsui
patent: 2004/0201402 (2004-10-01), Rajan
patent: 2004/0228196 (2004-11-01), Kwak et al.
patent: 2005/0212551 (2005-09-01), So et al.
patent: 2005/0226080 (2005-10-01), Lee
patent: 2005/0228912 (2005-10-01), Walker et al.
patent: 2005/0264316 (2005-12-01), Atkinson
patent: 2006/0007761 (2006-01-01), Ware
patent: 2006/0071683 (2006-04-01), Best
patent: 2006/0077731 (2006-04-01), Ware
patent: 2007/0007992 (2007-01-01), Bains et al.
patent: 2007/0070717 (2007-03-01), Kim
patent: 2007/0247185 (2007-10-01), Oie et al.
patent: 2009/0303802 (2009-12-01), Lee
patent: 102005036528 (2007-02-01), None
patent: 07-084863 (1995-03-01), None
patent: 2005/119471 (2005-12-01), None
patent: 97/02658 (1997-01-01), None
patent: 98/04041 (1998-01-01), None
patent: 00/41300 (2000-07-01), None
patent: 00/70474 (2000-11-01), None
patent: 2004/061690 (2004-07-01), None
patent: WO 2007-078496 (2007-07-01), None
Johnson, Chris. “The Future of Memory: Graphics DDR3 SDRAM Functionality.” Micron Designline, vol. 11, Issue 4, 4Q02. 8 pages.
“JEDEC Standard—DDR2 SDRAM Specification” JESD-2B (Revision of JESD79-2A), JEDEC Solid State Technology Association, Jan. 2005. 112 pages.
Johnson, Chris, “Graphics DDR3 On-Die Termination and Thermal Considerations.” Micron Designline, vol. 12, Issue 1. Rev. Apr. 1, 2003. 1Q03/2Q03. 8 pages.
Kyungki-Do, Yongin-Si, Korea (R.O.K.), Samsung Electronics Co., Ltd., Application Note GDDR2 ODT On/Off Control Method (Single Rank/Dual Rank), Product Planning & Application Eng. Team, 12 pages, Jul. 2003.
Farrell, Todd, “Core Architecture Doubles MEM Data Rate,” in Electronic Engineering Times Asia, Dec. 16, 2005. 4 pages.
512M bits DDR3 SDRAM, Preliminary Data Sheet, Elpida Memory, Inc. 2005-2006, Document No. E0785E11 (ver. 1.1), Feb. 2006, 4 pages, www.elpida.com.
Janzen, Jeff, “DDR2 Offers New Features and Functionality,” Designline, vol. 12, Issue 2, Micron, 16 pages, Jul. 31, 2003 EN.L.
Weidlich, Rainer, “What comes Next in Commodity DRAMS - DDR3,” Infineon Technologies, Jun. 2005, 4 pages.
Hynix and DDR3, Keynote Address at JEDEX Shanghai 2005, Oct. 2005, 24 pages.
Micron Technical Note, “DDR2-533 Memory Design Guide for Two-DIMM Unbuffered Systems, ” TN-47-01, 2003, 19 pages.
Shen, Dr. William Wu, Infineon Technologies, “System Challenges on DDR3 High Speed Clock/Address/Command Fly-by Bus Topology,” JEDEX San Jose, Apr. 18, 2006, 47 pages.
Rhoden, Desi and Lee, D.Y., “DDR/DDR2/DDR3 SDRAM Tutorial Sponsored by,” Samsung and Inphi, JEDEX San Jose, Oct. 25-26, 2005, 130 pages.
Rhoden, Desi “The Evolution of DDR,” Via Technology Forum 2005, Inphi Corp., 23 pages drhoden@inphi-copr.com.
Shen, Dr. William Wu, “DDR3 Functional Outlook,” JEDEX San Jose, Apr. 2006, 31 pages.
Shen, Dr. William Wu, “DDR3 Functional Outlook,” Infineon, JEDEX Shanghai, Oct. 25-26, 2005, 30 pages.
Lee, K.H., “MultimediaCard Solutions of Digital Storage Applications,” Samsung Electronics, JEDEX Shanghai, Oct. 26, 2005, 28 pages.
Samsung, “512Mb E-die DDR3 SDRAM Specification”, Preliminary Specification, Rev. 0.5, Dec. 2006, 55 pages.
Gervasi, Bill “DRAM Module Market Overview,” SimpleTech, JEDEX Shanghai, Oct. 25-26, 2005, 50 pages.
Trost, Hans-Peter “Press Presentation DDR3 Introduction,” Memory Products Group, Infineon Technologies, AG, Jun. 2005, 11 pages.
Micron Technical Note, TN-47-07: DDR2 Simulation Support; Rev A 7/05, 4 pages.
DDR2 ODT Control; Product Planning & Application Engineering Team, Dec. 2004, pp. 8.
Nanya Technology Corp., “512Mb DDR2 SDRAM,” Preliminary Specification, Nanya Technology Corp., Dec. 18, 2003, Rev. 0.2, 80 pages.
Invitation to Pay Additional Fees and Communication Relating to the Results of the Partial International Search in International Application PCT/US2007/069471, European Patent Office, Jan. 16, 2008, 8 pages.
International Search Report and the Written Opinion of the International Searching Authority for International Application RBS2.P057WO, European Patent Office, Apr. 7, 2008, 18 pages.
European Patent Office, Munich, Germany, International Preliminary report on Patentability, 23 Jul. 2008, 9 pages (PCT/US2007/069471).
EP Partial European Search Report with mail date of Nov. 11, 2009, for Patent Application 09163220.8. 4 pages.
EP Extended Search Report with mail date of Jan. 29, 2010 re EP Application No. 09163220.8. 9 pages.
Non-Final Office Action with mail date of Dec. 28, 2009, re U.S. Appl. No. 12/507,794. 9 pages.
EP Response dated Apr. 7, 2010 re EP Application No. 07853485.Jun. 2212 to the Official Communication dated Dec. 8, 2009, includes New claims 1-13 (clear and highlighted amendments) and New description pp. 2, 2a. 14 Pages.
Notice of Allowance and Fee(s) Due with mail date of Apr. 19, 2010 re U.S. Appl. No. 12/507,794 includes Information Disclosure Statement, 5 Pages.
Response dated Mar. 2, 2010 to Office action dated Dec. 28, 2009 re U.S. Appl. No. 12/507,794 includes Terminal Disclaimer and Information Disclosure Statement, 12 pages.
EP Office Communication pursuant to Article 94(3) EPC with mail date of Aug. 12, 2009 for Application No. 07853485.6-2212. 3 pages.
CN First Office Action dated Aug. 4, 2010 in CN Application No. 200780020133.3 (English Translation Included). 11 pages.

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