Memory configuration with self-aligning non-integrated capacitor

Details Memory configuration with self-aligning non-integrated capacitor Memory configuration with self-aligning non-integrated capacitor

1999-03-30

2000-08-01

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, 257306, 257532, 257618, 257773, 257778, H01L 2972

Patent

active

060970502

ABSTRACT:
A memory configuration with a self-aligning non-integrated capacitor configuration includes a capacitor configuration and a transistor configuration which can be joined together in a self-aligning manner in such a way that each first contact of a transistor of the transistor configuration is connected to a respective second contact of a memory capacitor of the capacitor configuration. In order to align the two configurations, the second contacts are constructed in a protruding manner, and when joining takes place they engage in a structure including elevations.

REFERENCES:
patent: 5060191 (1991-10-01), Nagasaki et al.
patent: 5335138 (1994-08-01), Sandhu et al.
International Publication No. WO 89/02653 (Go), dated Mar. 23, 1989.
International Publication No. WO 94/08442 (Pepe et al.), dated Apr. 14, 1994.

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