Memory configuration and method for reading a state from and...

Details Memory configuration and method for reading a state from and... Memory configuration and method for reading a state from and...

2005-05-17

2005-05-17

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000

Reexamination Certificate

active

06894330

ABSTRACT:
The state of a ferroelectric transistor in a memory cell is read or stored, and the threshold voltage of further ferroelectric transistors in further memory cells in the memory matrix is increased during the reading or storing, or is increased permanently. A memory configuration including ferroelectric memory cells is also provided.

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Takashi Nakamura et al.: “A Single-Transistor Ferroelectric Memory Cell”, 1995 IEEE International Solid-State Circuits Conference, pp. 68-69.
Jong-Son Lyu et al.: “Metal-Ferroelectric-Semiconductor Field-Effect Transistor (MFSFET) for Single Transistor Memory by Using Poly-Si Source/Drain and BaMgF4Dielectric”, IEDM 1996, pp. 503-506.

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