Memory comprising diode

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

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Details

C365S174000, C365S103000, C365S104000, C365S105000, C365S115000, C365S185130, C365S243000

Reexamination Certificate

active

07746690

ABSTRACT:
A memory operable at a high speed is obtained. This memory comprises a plurality of word lines, first transistors each connected to each the plurality of word lines for entering an ON-state through selection of the corresponding word line, a plurality of memory cells including diodes having cathodes connected to the source or drain regions of the first transistors respectively and a data determination portion connected to the drain or source regions of the first transistors for determining data read from a selected memory cell.

REFERENCES:
patent: 5361225 (1994-11-01), Ozawa
patent: 7317649 (2008-01-01), Kajigaya
patent: 2005/0205943 (2005-09-01), Yamada
patent: 2005/0269646 (2005-12-01), Yamada
patent: 2006/0197115 (2006-09-01), Toda
patent: 2005-268370 (2005-09-01), None

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