Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2006-11-21
2006-11-21
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S226000
Reexamination Certificate
active
07139206
ABSTRACT:
A memory component comprises a memory cell array, signal inputs, input amplifiers connected to respective ones of the signal inputs, for receiving, amplifying and outputting data, address or control signals, a data, address or control signal generator for the memory cell array, a first supply network for supplying power to the input amplifiers and a second supply network for supplying power to the data, address or control signal generator, wherein the first supply network and the second supply network do not have a direct connection.
REFERENCES:
patent: 5958026 (1999-09-01), Goetting et al.
patent: 6310796 (2001-10-01), Song
patent: 6366506 (2002-04-01), Mizuno et al.
patent: 6366513 (2002-04-01), Wang
patent: 6393343 (2002-05-01), Frey et al.
patent: 6621759 (2003-09-01), Waller
German Patent Office Examination Report dated Sep. 6, 2004.
Infineon - Technologies AG
Le Thong Q.
Patterson & Sheridan L.L.P.
LandOfFree
Memory component with improved noise insensitivity does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory component with improved noise insensitivity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory component with improved noise insensitivity will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3660763