Memory circuit with supply voltage flexibility and supply...

Details Memory circuit with supply voltage flexibility and supply... Memory circuit with supply voltage flexibility and supply...

2008-04-08

2008-04-08

Phan, Trong (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S189080, C365S194000, C365S230060, C365S226000, C365S185200

Reexamination Certificate

active

11212082

ABSTRACT:
The inventive memory circuit comprises a plurality of memory cells. The memory circuit further comprises a memory access means being controlled by at least one control signal. In addition, a control means for generating the at least one control signal is contained in the memory circuit, with the control means comprising a delay means. The delay means delays a switching of the at least one control signal. The delay time is adjustable in view of the applied supply voltage.

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patent: 2003/0042955 (2003-03-01), Nakayama et al.

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