Static information storage and retrieval – Read/write circuit – For complementary information
Patent
1979-10-31
1981-11-10
Hecker, Stuart N.
Static information storage and retrieval
Read/write circuit
For complementary information
G11C 700
Patent
active
043002137
ABSTRACT:
Digit lines, connected to the input and output terminals of a memory cell composed of MISFETs, are coupled to common data lines through a switching circuit which is controlled by a decoder circuit. There is also connected with the digit lines a load which is composed of a plurality of enhancement mode MISFETs connected in series in the diode form. The high level of the signals at the digit lines is lowered by the action of the load means. In response to the reduction in the potentials at the digit lines, the switching means is rendered conductive at an early rise time of control signals. As a result, the operating speed of the memory circuit can be increased.
REFERENCES:
patent: 4099265 (1978-07-01), Abe
patent: 4162540 (1979-07-01), Ando
patent: 4168537 (1979-09-01), Uchida
Fukuta Hiroshi
Nishimura Kotaro
Tanimura Nobuyoshi
Yasui Tokumasa
Hecker Stuart N.
Hitachi , Ltd.
Hitachi Ome Electronic Co., Ltd.
LandOfFree
Memory circuit with increased operating speed does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory circuit with increased operating speed, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory circuit with increased operating speed will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2365124