Memory circuit with improved redundant structure

Details Memory circuit with improved redundant structure Memory circuit with improved redundant structure

1984-02-23

1986-02-18

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Bad bit

365189, G11C 1140

Patent

active

045717079

ABSTRACT:
A memory circuit having an improved redundant structure which can operate with low power consumption. A plurality of program cells to store information identifying faulty memory cells. Each of the program cells is composed of a first series circuit of a program element and a first transistor of a first conductivity and a second series circuit of a second transistor of a second conductivity type and a third transistor of the first conductivity type, gates of the second and third transistors being connected to an intermediate junction of the first series circuit and a gate of the first transistor being connected to an intermediate junction of the second series circuit.

REFERENCES:
patent: 4233674 (1980-11-01), Russell et al.
patent: 4464736 (1984-08-01), Smith
patent: 4523313 (1985-06-01), Nibby et al.

Affiliated with

Also associated with

Rating

Memory circuit with improved redundant structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory circuit with improved redundant structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory circuit with improved redundant structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1554279