Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2007-08-28
2007-08-28
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S189020, C365S189070
Reexamination Certificate
active
11246046
ABSTRACT:
The inventive memory circuit comprises a main memory block and a substitution memory block for substitution of defect memory cells, with the substitution memory block being external to the main memory block. The substitution memory block is arranged to substitute at least one bitline-related or wordline-related set of memory cells being connected to the same bitline or wordline, respectively. Furthermore, the inventive memory circuit comprises redirection means for redirecting the access to a memory cell of the at least one respective substituted set of memory cells to the substitution memory block.
REFERENCES:
patent: 4376300 (1983-03-01), Tsang
patent: 4601031 (1986-07-01), Walker et al.
patent: 5416740 (1995-05-01), Fujita et al.
patent: 5504712 (1996-04-01), Conan
patent: 5644541 (1997-07-01), Siu et al.
patent: 5793683 (1998-08-01), Evans
patent: 6484271 (2002-11-01), Gray
patent: 6542418 (2003-04-01), Braceras et al.
patent: 6909645 (2005-06-01), Eilert
patent: 7023747 (2006-04-01), Takahashi
patent: WO92/08231 (1992-05-01), None
Gouin Vincent
Hirel Linda
Palau Luc
Infineon - Technologies AG
Lam David
Patterson & Sheridan L.L.P.
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