Memory circuit with flexible bitline-related and/or...

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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C365S189020, C365S189070

Reexamination Certificate

active

11246046

ABSTRACT:
The inventive memory circuit comprises a main memory block and a substitution memory block for substitution of defect memory cells, with the substitution memory block being external to the main memory block. The substitution memory block is arranged to substitute at least one bitline-related or wordline-related set of memory cells being connected to the same bitline or wordline, respectively. Furthermore, the inventive memory circuit comprises redirection means for redirecting the access to a memory cell of the at least one respective substituted set of memory cells to the substitution memory block.

REFERENCES:
patent: 4376300 (1983-03-01), Tsang
patent: 4601031 (1986-07-01), Walker et al.
patent: 5416740 (1995-05-01), Fujita et al.
patent: 5504712 (1996-04-01), Conan
patent: 5644541 (1997-07-01), Siu et al.
patent: 5793683 (1998-08-01), Evans
patent: 6484271 (2002-11-01), Gray
patent: 6542418 (2003-04-01), Braceras et al.
patent: 6909645 (2005-06-01), Eilert
patent: 7023747 (2006-04-01), Takahashi
patent: WO92/08231 (1992-05-01), None

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