Memory circuit with active load

Static information storage and retrieval – Read/write circuit – For complementary information

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365208, 365227, 307530, G11C 700, G11C 1140

Patent

active

048456721

ABSTRACT:
A memory circuit incorporates a plurality of memory cells arranged in matrix form, with a data line drive circuit having an active load circuit including two MOS transistors, operating as resistive elements during writing, and connected to the data line and the inverted data line of the cells. A differential amplifier is connected to the data line and inverted data line, and a plurality of constant current sources are connected to the transistors of the differential amplifier, with switching means causing one constant current source to be nonconductive during a write operation, with at least one of the current sources being normally on during reading and writing.

REFERENCES:
patent: 4114192 (1978-09-01), Suzuki et al.
patent: 4272834 (1981-06-01), Noguchi et al.
patent: 4379344 (1983-04-01), Ozawa et al.
patent: 4412143 (1983-10-01), Patella et al.
patent: 4421996 (1983-12-01), Chuang et al.
patent: 4507759 (1985-03-01), Yasui et al.
patent: 4639900 (1987-01-01), Koshizuka
patent: 4665507 (1987-05-01), Gondou et al.
patent: 4739499 (1988-04-01), Simpson
patent: 4760561 (1988-07-01), Yamamoto et al.
Minato et al., "A HI-CMOS 11 8k x 8b Static RAM", IEEE ISSCC Dig. of Tech. Papers, 2-12-82, pp. 256-257, 332.
Minato et al., "2k x 8 bit Hi-CMOS Static RAMs", IEEE Journal of Solid-State Circuits, vol. SC-15, 1980, No. 4, pp. 656-660.
Isobe et al., "An 18 ns CMOS/SOS 4k Static RAM", IEEE Journal of Solid-State Circuits, vol. SC-16, 1981, No. 5, pp. 460-465.
Ochii et al., IEEE Journal of Solid-State Circuits, vol. SC-17, 1982, Np. 5, pp. 798-803, "An Ultra Low 8k x 8-Bit Full CMOS RAM with a Six Transistor cell".
Hardee et al., "A 30 ns 64k CMOS RAM", IEEE International Solid-State Circuits Conference 27, 1984, Conf. 31, pp. 216, 217, 341.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory circuit with active load does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory circuit with active load, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory circuit with active load will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-857809

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.