Memory circuit using a reference for sensing

Details Memory circuit using a reference for sensing Memory circuit using a reference for sensing

2006-07-28

2008-12-30

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S189070, C365S189090

Reexamination Certificate

active

07471582

ABSTRACT:
A memory includes a plurality of memory cells, a sense amplifier coupled to at least one of the plurality of memory cells, a temperature dependent current generator comprising a plurality of selectable temperature dependent current sources for generating a temperature dependent current, a temperature independent current generator comprising a plurality of selectable temperature independent current sources for generating a temperature independent current, and a summer coupled to the temperature dependent current generator and the temperature independent current generator for combining the temperature dependent current and the temperature independent current to generate a reference current for use by the sense amplifier. A temperature coefficient of the reference current is approximately a same as a temperature coefficient of a memory cell current of at least one of the plurality of memory cells.

REFERENCES:
patent: 6697283 (2004-02-01), Marotta et al.
patent: 2004/0062085 (2004-04-01), Wang et al.
patent: 2005/0078537 (2005-04-01), So et al.
patent: 2007/0171708 (2007-07-01), Tedrow et al.

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