Error detection/correction and fault detection/recovery – Pulse or data error handling – Memory testing
Reexamination Certificate
2003-06-06
2009-08-18
Britt, Cynthia (Department: 2117)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Memory testing
C365S201000
Reexamination Certificate
active
07577884
ABSTRACT:
A semiconductor device that performs refresh tests of a plurality of individual memories built into the same chip and prevents excessive testing during the refresh test. When a first testing circuit enters a wait state, the first testing circuit issues a refresh command REF to a first memory circuit. Then, the first memory circuit refreshes the memory cells until a second testing circuit enters the wait state. That is, since the memory cells of the first memory circuit are refreshed until the writing to a second memory circuit ends, the refresh test time of the first and second memory circuits are the same.
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“Quality memory blocks-balancing the trade-offs” by Prince, B. IEEE First International Symposium on Quality Electronic Design, 2000. ISQED 2000. Proceedings Publication Date: 2000 on pp. 109-114 Meeting Date: Mar. 20, 2000-Mar. 22, 2000 ISBN: 0-7695-0525-2 INSPEC Accession No. 6622773.
Murase Yasunori
Ogura Kiyonori
Arent & Fox LLP
Britt Cynthia
Fujitsu Microelectronics Limited
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