Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2005-03-15
2005-03-15
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S225700, C365S233100
Reexamination Certificate
active
06868018
ABSTRACT:
A memory circuit includes one or several voltage generators for generating operating voltages for memory elements of the memory circuit and a means for selectively setting a current which may be supplied by one of the one or several voltage generators depending on an operating frequency for the memory circuit.
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Weinfurtner, O.: “Advanced Controlling Scheme for a DRAM Voltage Generator System”, IEEE Journal of Solid-State Circuits, vol. 35, No. 4, Apr. 2000, pp. 552-563.
Greenberg Laurence A.
Hoang Huan
Infineon - Technologies AG
Locher Ralph E.
Stemer Werner H.
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