Memory circuit improved in electrical characteristics

Static information storage and retrieval – Read/write circuit – Differential sensing

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365208, G11C 702

Patent

active

057425515

ABSTRACT:
A constant current source is connected in series to a current source circuit including a MOS transistor which is used as a current source for a differential output amplifier circuit, an emitter follower circuit or a source follower circuit used with a semiconductor integrated circuit. In a multiplex circuit, an input signal is inputted to each of base terminals of a plurality of bipolar transistors. When one input signal is selected, the bipolar transistor corresponding to the selected input signal is made to be operable with an input signal from a signal input terminal by a control circuit. The bipolar transistors corresponding to the non-selection input signals are turned OFF irrespective of potential levels of the individual input signals by current drawing circuits. There is also disclosed a semiconductor memory circuit having a plurality of memory cells, a memory cell selection scheme and a sense amplifier for amplifying data outputted from the selected memory cell, in which a constant current circuit is provided in series connection to the sense amplifier to enhance the performance characteristics of the memory circuit. Also, a plural memory array scheme is disclosed which employs multiplexing techniques connected to presense amplifier circuits of the respective memory arrays.

REFERENCES:
patent: 3953839 (1976-04-01), Dennison et al.
patent: 4147943 (1979-04-01), Peterson
patent: 4651033 (1987-03-01), Yasutake et al.
patent: 4668881 (1987-05-01), Piasecki
patent: 4814686 (1989-03-01), Watanabe
patent: 4883987 (1989-11-01), Fattaruso
patent: 4984196 (1991-01-01), Tran et al.
patent: 5122689 (1992-06-01), Barre
patent: 5144164 (1992-09-01), Sugimoto et al.
patent: 5373469 (1994-12-01), Akioka
patent: 5473568 (1995-12-01), Okamura
Japanese Patent Abstracts, vol. 14, No. 18, (E-873) 3961, Jan. 16, 1990.

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