Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1995-10-31
1998-06-23
Yoo, Do Hyun
Static information storage and retrieval
Read/write circuit
Bad bit
365168, 36518907, 365201, 36523006, G11C 2900
Patent
active
057711941
ABSTRACT:
To switch redundancy circuit properly by performing tests by equipment itself such as semiconductor unit or computer containing semiconductor unit, etc. without using any expensive laser unit. Relieves failure by controlling selectors SEL1 to SEL4 with control memory cells C11 to C14 connected respectively to a plural number of external bit lines OBL1 to OBL4 and by switching the relation of correspondence between the external bit lines OBL1 to OBL4 and the internal bit lines BL1 to BL5. The data to the control memory cells C11 to C14 is given from the external bit lines OBL1 to OBL4.
REFERENCES:
patent: 5379258 (1995-01-01), Murakami et al.
patent: 5528539 (1996-06-01), Ong et al.
Mitsubishi Denki & Kabushiki Kaisha
Yoo Do Hyun
LandOfFree
Memory circuit, data control circuit of memory circuit and addre does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory circuit, data control circuit of memory circuit and addre, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory circuit, data control circuit of memory circuit and addre will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1399206