Memory circuit, data control circuit of memory circuit and addre

Static information storage and retrieval – Read/write circuit – Bad bit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365168, 36518907, 365201, 36523006, G11C 2900

Patent

active

057711941

ABSTRACT:
To switch redundancy circuit properly by performing tests by equipment itself such as semiconductor unit or computer containing semiconductor unit, etc. without using any expensive laser unit. Relieves failure by controlling selectors SEL1 to SEL4 with control memory cells C11 to C14 connected respectively to a plural number of external bit lines OBL1 to OBL4 and by switching the relation of correspondence between the external bit lines OBL1 to OBL4 and the internal bit lines BL1 to BL5. The data to the control memory cells C11 to C14 is given from the external bit lines OBL1 to OBL4.

REFERENCES:
patent: 5379258 (1995-01-01), Murakami et al.
patent: 5528539 (1996-06-01), Ong et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory circuit, data control circuit of memory circuit and addre does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory circuit, data control circuit of memory circuit and addre, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory circuit, data control circuit of memory circuit and addre will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1399206

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.