Static information storage and retrieval – Systems using particular element – Multiaperture cell
Reexamination Certificate
2006-09-12
2006-09-12
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Multiaperture cell
C365S100000
Reexamination Certificate
active
07106614
ABSTRACT:
The invention relates to a memory circuit for providing an item of information for a prescribed period of time. The memory circuit has a memory cell with a PMC resistance component which has a solid electrolyte material and a write circuit for writing to the memory cell by applying an electrical variable to the solid electrolyte material. The write circuit is configured to set a resistance of the PMC resistance component on the basis of the prescribed period of time. The resistance corresponds to a logic state of the memory cell and increases over time such that the resistance reaches or exceeds a prescribed resistance threshold value in the prescribed period of time.
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Infineon - Technologies AG
Patterson & Sheridan L.L.P.
Phung Anh
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