Memory cells utilizing metal-to-metal capacitors to reduce...

Details Memory cells utilizing metal-to-metal capacitors to reduce... Memory cells utilizing metal-to-metal capacitors to reduce...

2006-09-19

2006-09-19

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S063000, C365S072000, C365S104000, C365S156000, C365S174000, C257S401000, C257S409000, C257S300000, C257S379000

Reexamination Certificate

active

07110281

ABSTRACT:
Structures and methods of adding metal-to-metal capacitors to static memory cells to reduce susceptibility to SEUs. The addition of metal-to-metal capacitors is particularly suited to programmable logic devices (PLDs), because of the relatively large area required to implement an effective metal-to-metal capacitor, compared (for example) to the size of the static memory cell itself. The configuration memory cells of PLDs are typically placed next to other logic (e.g., the configurable elements controlled by the configuration memory cells) that can be overlain by the metal-to-metal capacitors. Therefore, metal-to-metal capacitors can be used in PLD configuration memory cells where they might be impractical in simple memory arrays. However, metal-to-metal capacitors can also be applied to integrated circuits other than PLDs.

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