Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-03-01
2011-03-01
Sofocleous, Alexander (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185280, C977S943000
Reexamination Certificate
active
07898850
ABSTRACT:
Some embodiments include memory cells having vertically-stacked charge-trapping zones spaced from one another by dielectric material. The dielectric material may comprise high-k material. One or more of the charge-trapping zones may comprise metallic material. Such metallic material may be present as a plurality of discrete isolated islands, such as nanodots. Some embodiments include methods of forming memory cells in which two charge-trapping zones are formed over tunnel dielectric, with the zones being vertically displaced relative to one another, and with the zone closest to the tunnel dielectric having deeper traps than the other zone. Some embodiments include electronic systems comprising memory cells. Some embodiments include methods of programming memory cells having vertically-stacked charge-trapping zones.
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Bhattacharyya Arup
Brewer Rhett T.
Graettinger Thomas M.
Krishnamohan Tejas
Min Kyu S.
Micro)n Technology, Inc.
Sofocleous Alexander
Wells St. John P.S.
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